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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC4DSM/D TRIACS Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. * Small Size Surface Mount DPAK Package * Passivated Die for Reliability and Uniformity * Blocking Voltage to 800 V * On-State Current Rating of 4.0 Amperes RMS at 108C * Low IGT -- 10 mA Maximum in 3 Quadrants * High Immunity to dv/dt -- 50 V/ms at 125C ORDERING INFORMATION * To Obtain "DPAK" in Surface Mount Leadform (Case 369A) Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number, i.e. MAC4DSNT4 G MT2 MAC4DSM MAC4DSN Motorola Preferred Devices TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 MT1 MT2 G * To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves -- Add "-1" Suffix to Device Number, i.e. MAC4DSN-1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 108C) Average Gate Power (t = 8.3 msec, TC = 108C) Peak Gate Current (Pulse Width 10 msec, TC = 108C) Peak Gate Voltage (Pulse Width 10 msec, TC = 108C) Operating Junction Temperature Range Storage Temperature Range MAC4DSM MAC4DSN IT(RMS) Symbol VDRM CASE 369A-13 STYLE 6 Value 600 800 Unit Volts Amps 4.0 ITSM 40 I2t PGM 0.5 PG(AV) 0.1 IGM VGM TJ Tstg 0.2 5.0 -40 to 125 -40 to 150 Amps Volts C 6.6 A2sec Watts THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) Symbol RqJC RqJA RqJA TL Max 3.5 88 80 260 Unit C/W C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data (c) Motorola, Inc. 1999 1 MAC4DSM MAC4DSN ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristics Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) Peak On-State Voltage (1) (ITM = 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) TJ = 125C Holding Current (VD = 12 V, Gate Open, IT = 200 mA) Latching Current (VD = 12 V, IG = 10 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) TJ = 25C TJ = 125C VTM -- IGT 2.9 2.9 2.9 VGT 0.5 0.5 0.5 0.2 IH 2.0 IL -- -- -- 6.0 10 6.0 30 30 30 5.5 15 mA 0.7 0.65 0.7 0.4 1.3 1.3 1.3 -- mA 4.0 5.0 7.0 10 10 10 Volts 1.3 1.6 mA Symbol IDRM -- -- -- -- 0.01 2.0 Volts Min Typ Max Unit mA DYNAMIC CHARACTERISTICS Characteristics Rate of Change of Commutating Current (1) (VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open, TJ = 125C, f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 15 Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) (1) Pulse test: Pulse Width 2.0 msec, Duty Cycle 2%. dv/dt 50 175 -- Symbol di/dt(c) 3.0 4.0 -- Min Typ Max Unit A/ms V/ms 2 Motorola Thyristor Device Data MAC4DSM MAC4DSN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 6.0 180 5.0 dc 120 a = 30 60 90 120 90 4.0 3.0 2.0 a = CONDUCTION ANGLE 115 110 a = CONDUCTION ANGLE 120 180 dc 3.5 4.0 a = 30 1.0 0 0 1.0 2.0 3.0 60 105 0 0.5 1.0 1.5 2.0 2.5 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 4.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) TYPICAL @ TJ = 25C 10 MAXIMUM @ TJ = 125C r(t) , TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 1.0 MAXIMUM @ TJ = 25C 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 k t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 18 VGT, GATE TRIGGER VOLTAGE(VOLTS) Q3 I GT, GATE TRIGGER CURRENT (mA) 16 14 12 10 8.0 6.0 4.0 2.0 0 -50 -25 0 25 50 75 100 125 Q1 Q2 1.0 Q3 0.8 Q2 Q1 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 3 MAC4DSM MAC4DSN 14 12 IH , HOLDING CURRENT (mA) 10 MT2 NEGATIVE 8.0 6.0 4.0 2.0 0 -50 MT2 POSITIVE IL, LATCHING CURRENT (mA) 20 Q1 15 Q3 10 25 Q2 5.0 0 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 TJ = 125C 800 STATIC dv/dt (V/ ms) STATIC dv/dt (V/ m s) 1200 TJ = 125C 1000 800 600 400 200 0 100 1000 RGK, GATE-MT1 RESISTANCE (OHMS) 10 k 100 1000 RGK, GATE-MT1 RESISTANCE (OHMS) 10 k 600 V VPK = 400 V 600 400 600 V 200 0 800 V VPK = 400 V 800 V Figure 9. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(-) 800 GATE OPEN 600 STATIC dv/dt (V/ ms) STATIC dv/dt (V/ m s) TJ = 100C 400 110C 125C 200 2000 1600 TJ = 100C 1200 110C 800 125C GATE OPEN 400 0 400 500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) 0 Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(-) 4 Motorola Thyristor Device Data MAC4DSM MAC4DSN 800 GATE OPEN 600 STATIC dv/dt (V/ ms) VPK = 400 V STATIC dv/dt (V/ ms) 1600 1400 1200 1000 800 600 400 800 V 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (C) 200 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (C) 800 V 600 V VPK = 400 V GATE OPEN 400 600 V 200 Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(-) 100 VPK = 400 V dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ ms) TJ = 125C 10 100C 75C tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 1.0 0 5.0 10 15 20 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 MAC4DSM MAC4DSN LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I - + 2 1N914 51 G 1 1N4007 CHARGE 400 V NON-POLAR CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 6 Motorola Thyristor Device Data MAC4DSM MAC4DSN PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T STYLE 6: PIN 1. 2. 3. 4. M MT1 MT2 GATE MT2 DIM A B C D E F G H J K L R S U V Z CASE 369A-13 ISSUE Z Motorola Thyristor Device Data 7 MAC4DSM MAC4DSN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26629298 HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 8 Motorola Thyristor Device Data MAC4DSM/D |
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